Solar cell module and method for manufacturing the same

ABSTRACT

A solar cell module and a method for manufacturing the same are disclosed. The solar cell module includes solar cells each including a semiconductor substrate, and first electrodes and second electrodes extending in a first direction on a surface of the semiconductor substrate, conductive lines extended in a second direction crossing the first direction on the surface of the semiconductor substrate and connected to the first electrodes or the second electrodes through a conductive adhesive, and an insulating adhesive portion extending in the first direction on at least a portion of the surface of the semiconductor substrate, on which the conductive lines are disposed, and fixing the conductive lines to the semiconductor substrate and the first and second electrodes. The insulating adhesive portion is attached up to an upper part and a side of at least a portion of each conductive line.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to and the benefit of Korean PatentApplication No. 10-2015-0127488 filed in the Korean IntellectualProperty Office on Sep. 9, 2015, the entire contents of which areincorporated herein by reference.

BACKGROUND OF THE INVENTION

Field of the Invention

Embodiments of the invention relate to a solar cell module and a methodfor manufacturing the same.

Description of the Related Art

Recently, as existing energy sources such as petroleum and coal areexpected to be depleted, interests in alternative energy sources forreplacing the existing energy sources are increasing. Among thealternative energy sources, solar cells for generating electric energyfrom solar energy have been particularly spotlighted.

A solar cell generally includes semiconductor parts, which respectivelyhave different conductive types, for example, a p-type and an n-type andthus form a p-n junction, and electrodes respectively connected to thesemiconductor parts of the different conductive types.

When light is incident on the solar cell, a plurality of electron-holepairs are produced in the semiconductor parts and are separated intoelectrons and holes by the incident light. The electrons move to then-type semiconductor part, and the holes move to the p-typesemiconductor part. Then, the electrons and the holes are collected bythe different electrodes respectively connected to the n-typesemiconductor part and the p-type semiconductor part. The electrodes areconnected to each other using electric wires to thereby obtain electricpower.

A plurality of solar cells having the above-described configuration maybe connected to one another through interconnectors to form a module.

A back contact solar cell is a solar cell, in which all of electrodesare disposed on a back surface of a semiconductor substrate. A pluralityof back contact solar cells may be connected in series to one anotherthrough a plurality of conductive lines connected to a back surface of asemiconductor substrate of each back contact solar cell.

In such a structure in which a plurality of conductive lines areconnected to a back surface of a semiconductor substrate, before theconductive lines are connected to the back surface of the semiconductorsubstrate, the plurality of conductive lines, that are disposed on theback surface of the semiconductor substrate and are not fixed to theback surface of the semiconductor substrate, may move on the backsurface of the semiconductor substrate and may be out of alignment.Hence, there is a difficulty in a module manufacturing process.

SUMMARY OF THE INVENTION

In one aspect, there is provided a solar cell module including solarcells each including a semiconductor substrate, and first electrodes andsecond electrodes that extend in a first direction on a surface of thesemiconductor substrate, the first electrodes and the second electrodeshaving different polarities, conductive lines extended in a seconddirection crossing the first direction on the surface of thesemiconductor substrate, the conductive lines being connected to thefirst electrodes or the second electrodes through a conductive adhesive,and an insulating adhesive portion extending in the first direction onat least a portion of the surface of the semiconductor substrate, onwhich the conductive lines are disposed, and fixing the conductive linesto the semiconductor substrate and the first and second electrodes, theinsulating adhesive portion being attached on a back surface of least aportion of each conductive line and a side surface of at least a portionof each conductive line.

The insulating adhesive portion may be further attached up to thesemiconductor substrate exposed between the conductive lines andsurfaces of the first and second electrodes.

The insulating adhesive portion may be an insulating tape including anadhesive on a surface of a base film. The base film may include apolyolefin material. A melting point of the base film may be lower thanone temperature between 160° C. and 170° C.

The adhesive of the insulating adhesive portion may include at least oneof acrylic, silicon, and an epoxy.

A width of the insulating adhesive portion in the second direction maybe greater than a distance between two adjacent conductive lines.

The first electrodes and the second electrodes may be positioned on aback surface of the semiconductor substrate. The conductive lines may bepositioned on the back surface of the semiconductor substrate, on whichthe first electrodes and the second electrodes are positioned.

The insulating adhesive portion may be positioned on the back surface ofthe semiconductor substrate, on which the first electrodes, the secondelectrodes, and the conductive lines are positioned.

The semiconductor substrate of each solar cell may be doped withimpurities of a first conductive type. Each solar cell may furtherinclude an emitter region doped with impurities of a second conductivetype opposite the first conductive type at the back surface of thesemiconductor substrate and a back surface field region more heavilydoped than the semiconductor substrate with impurities of the firstconductive type.

Each first electrode may be connected to the emitter region, and eachsecond electrode may be connected to the back surface field region.

The conductive lines may include first conductive lines connected to thefirst electrodes through the conductive adhesive and insulated from thesecond electrodes through an insulating layer, and second conductivelines connected to the second electrodes through the conductive adhesiveand insulated from the first electrodes through the insulating layer.

The solar cells may include a first solar cell and a second solar cellthat are arranged adjacent to each other in the second direction and areconnected in series to each other. An interconnector may be positionedbetween the first solar cell and the second solar cell and connects thefirst solar cell and the second solar cell in series.

The interconnector between the first solar cell and the second solarcell may extend in the first direction. The first conductive linesconnected to the first solar cell and the second conductive linesconnected to the second solar cell may be commonly connected to theinterconnector.

In another aspect, there is provided a method for manufacturing a solarcell module, the method including applying a conductive adhesive to aportion of each of first electrodes and the second electrodes, the firstelectrodes and the second electrodes extending in a first direction on asurface of a semiconductor substrate and having different polarities,disposing conductive lines to extend in a second direction crossing thefirst direction and to overlap the portion of the each of the firstelectrodes and the second electrodes, to which the conductive adhesiveis applied, attaching an insulating adhesive portion extending in thefirst direction to the semiconductor substrate and a portion of eachconductive line, and performing a lamination process on thesemiconductor substrate, to which the insulating adhesive portion isattached, wherein the performing of the lamination process includessoftening and curing the insulating adhesive portion, the insulatingadhesive portion is attached on a back surface of at least the portionof each conductive line in the attaching of the insulating adhesiveportion, and the insulating adhesive portion is further attached on aside surface of the at least the portion of the each conductive linewhile the insulating adhesive portion is softened and cured.

The lamination process may be performed at one temperature between 160°C. and 170° C.

A melting point of the insulating adhesive portion may be lower than atemperature of the lamination process. The insulating adhesive portionmay be a type of an insulating tape obtained by forming an adhesive on asurface of a base film.

The base film may include a polyolefin material, and melting points ofthe base film and the adhesive may be lower than a temperature of thelamination process.

The performing of the lamination process may include filling theinsulating adhesive portion, that is in a softened state, in at least aportion of an empty space between the conductive lines and the firstelectrodes and the second electrodes and then curing the insulatingadhesive portion.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification, illustrate embodiments of the invention andtogether with the description serve to explain the principles of theinvention. In the drawings:

FIG. 1 is a plane view of an entire front surface of a solar cell moduleaccording to an embodiment of the invention;

FIG. 2 schematically illustrates a cross section of a string, in whichfirst and second solar cells are connected by an interconnector;

FIG. 3 illustrates a back surface of a string, in which first and secondsolar cells are connected by an interconnector;

FIG. 4 is a partial perspective view illustrating an example of a solarcell shown in FIG. 3;

FIG. 5 is a cross-sectional view of a solar cell shown in FIG. 4 in asecond direction;

FIG. 6 is a cross-sectional view taken along line csx1-csx1 of FIG. 3;

FIG. 7 is an enlarged view of a back surface of a solar cell module, towhich an insulating adhesive portion shown in FIG. 3 is attached;

In FIG. 8, (a) is an enlarged view of a cross section of a seconddirection along line A-A of FIG. 7 before a lamination step, and in FIG.8, (b) is an enlarged view of a cross section of the second directionalong line A-A of FIG. 7 in a finally completed solar cell module afterthe lamination step;

In FIG. 9, (a) is an enlarged view of a cross section of a firstdirection along line B-B of FIG. 7 before a lamination step, and in FIG.9, (b) is an enlarged view of a cross section of the first directionalong line B-B of FIG. 7 in a finally completed solar cell module afterthe lamination step; and

FIGS. 10 to 13 illustrate a method for manufacturing a solar cell moduleaccording to an embodiment of the invention.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Reference will now be made in detail to embodiments of the invention,examples of which are illustrated in the accompanying drawings. Thisinvention may, however, be embodied in many different forms and shouldnot be construed as limited to the embodiments set forth herein.Wherever possible, the same reference numbers will be used throughoutthe drawings to refer to the same or like parts. It will be noted that adetailed description of known arts will be omitted if it is determinedthat the detailed description of the known arts can obscure theembodiments of the invention.

In the drawings, the thickness of layers, films, panels, regions, etc.,are exaggerated for clarity. It will be understood that when an elementsuch as a layer, film, region, or substrate is referred to as being “on”another element, it can be directly on the other element or interveningelements may also be present. In contrast, when an element is referredto as being “directly on” another element, there are no interveningelements present. Further, it will be understood that when an elementsuch as a layer, film, region, or substrate is referred to as being“entirely” on other element, it may be on the entire surface of theother element and may not be on a portion of an edge of the otherelement.

In the following description, a front surface of any component may be asurface of a direction facing a front surface of a module, on whichlight is directly incident, and a back surface of any component may be asurface of a direction facing a back surface of the module, on whichlight is not directly incident or reflective light may be incident.

In the following description, a cell string indicates a structure or ashape, in which a plurality of solar cells are connected in series toone another

In the following description, the fact that a thickness or a width of acomponent is equal to a thickness or a width of another componentindicates that they have the same value within a margin of error of 10%including a process error.

FIG. 1 is a plane view of an entire front surface of a solar cell moduleaccording to an embodiment of the invention. FIG. 2 schematicallyillustrates a cross section of first and second solar cells that areadjacent to each other in a second direction and are connected by aninterconnector.

As shown in FIGS. 1 and 2, a solar cell module according to anembodiment of the invention may include a plurality of solar cells C1and C2, a plurality of conductive lines CW, an insulating adhesiveportion AT, and an interconnector IC.

In the embodiment disclosed herein, the interconnector IC may beomitted, if necessary or desired. However, the embodiment of theinvention is described using the solar cell module including theinterconnector IC by way of example as shown in FIG. 1.

The solar cell module according to the embodiment of the invention mayfurther include components (for example, a front transparent substrate10, encapsulants 20 and 30, a back substrate 40, and a frame 50) forencapsulating a cell string formed by connecting the plurality of solarcells C1 and C2 in series.

As shown in FIG. 1, each solar cell may be arranged to extend in asecond direction y and may include a semiconductor substrate 110 and aplurality of first and second electrodes C141 and C142 on a back surfaceof the semiconductor substrate 110.

As shown in FIGS. 1 and 2, a plurality of first and second conductivelines CW may be connected to a back surface of each solar cell.

As shown in FIGS. 1 and 2, the plurality of solar cells, to which theplurality of first and second conductive lines CW are connected, may beconnected in series to each other in the second direction y by theinterconnector IC.

For example, the interconnector IC may be disposed to extend between twoadjacent solar cells in a first direction x and may connect in seriesfirst and second solar cells C1 and C2, that are spaced apart from eachother in the second direction y among the plurality of solar cells.

In this instance, as shown in FIG. 2, front surfaces of a plurality offirst conductive lines CW1 connected to the first solar cell C1 andfront surfaces of a plurality of second conductive lines CW2 connectedto the second solar cell C2 may be connected to a back surface of theinterconnector IC. Hence, the plurality of solar cells C1 and C2 may beconnected in series to form a cell string.

As shown in FIG. 2, the cell string, that is disposed between the fronttransparent substrate 10 and the back substrate 40, may be thermallypressed and laminated.

For example, a lamination process simultaneously applying heat andpressure may be performed in a state where the plurality of solar cellsC1 and C2 are disposed between the front transparent substrate 10 andthe back substrate 40, and the encapsulants 20 and 30 of a transparentmaterial (for example, an ethylene vinyl acetate (EVA) sheet) aredisposed on the front surfaces and the back surfaces of the plurality ofsolar cells C1 and C2. Hence, the components may be integrated andencapsulated.

As shown in FIG. 1, edges of the front transparent substrate 10, theencapsulants 20 and 30, and the back substrate 40, that are encapsulatedthrough the lamination process, may be fixed and protected by the frame50.

Each cell string may extend in the second direction y. The plurality ofcell strings may be spaced apart from one another in the first directionx and may be connected in series to one another in the first direction xby bushing bars 310 and 350 extending in the first direction x.

The front transparent substrate 10 may be formed of a tempered glass,etc. having a high transmittance and an excellent damage preventionfunction.

The back substrate 40 can prevent moisture and oxygen from penetratinginto the back surfaces of the solar cells C1 and C2 and protect thesolar cells C1 and C2 from an external environment. The back substrate40 may have a multi-layered structure including a moisture/oxygenpenetrating prevention layer, a chemical corrosion prevention layer,etc.

The back substrate 40 may be formed as a thin sheet formed of aninsulating material, such as fluoropolymer/polyester/fluoropolymer(FP/PE/FP). Insulating sheets formed of other insulating materials maybe used in the back substrate 40.

The lamination process may be performed in a state where thesheet-shaped encapsulants 20 and 30 are respectively disposed betweenthe front transparent substrate 10 and the solar cells C1 and C2 andbetween the solar cells C1 and C2 and the back substrate 40.

In the embodiment disclosed herein, the encapsulants 20 and 30 may beformed of a material different from a material of an insulating layer ILof FIG. 3. The encapsulants 20 and 30 may be formed of a material (forexample, ethylene vinyl acetate (EVA)) capable of preventing a corrosionresulting from moisture penetration and absorbing an impact to protectthe solar cells C1 and C2 from the impact.

The sheet-shaped encapsulants 20 and 30 disposed between the fronttransparent substrate 10 and the solar cells C1 and C2 and between thesolar cells C1 and C2 and the back substrate 40 may be softened andcured by heat and pressure during the lamination process.

The insulating adhesive portion AT may be positioned on the conductivelines CW disposed on the back surface of the semiconductor substrate 110and may extend in the first direction x crossing a longitudinaldirection of the conductive lines CW, thereby attaching the conductivelines CW to the back surface of the semiconductor substrate 110.

As shown in FIG. 2, the encapsulant 30 may closely adhere to a backsurface and a side of the insulating adhesive portion AT and thus mayphysically and directly contact the back surface and the side of theinsulating adhesive portion AT.

After a structure of the solar cell, the conductive lines, and theinterconnector are described in detail, the insulating adhesive portionAT is described in detail with reference to figures subsequent to FIG.7.

Hereinafter, a structure of the solar cell module shown in FIGS. 1 and2, in which the plurality of solar cells are connected in series by theconductive lines CW and the interconnector IC, is described in detail.

FIGS. 3 to 6 illustrate an example of a solar cell module according toan embodiment of the invention.

More specifically, FIG. 3 illustrates an example of a string applied toa solar cell module according to an embodiment of the invention whenviewed from a back surface.

Each of a plurality of solar cells C1 and C2 may at least include asemiconductor substrate 110 and a plurality of first and secondelectrodes C141 and C142 that are spaced apart from each other on asurface (for example, a back surface) of the semiconductor substrate 110and extend in the first direction x.

A plurality of conductive lines CW may electrically connect in series aplurality of first electrodes C141 included in one solar cell of twoadjacent solar cells among the plurality of solar cells to a pluralityof second electrodes C142 included in the other solar cell through aninterconnector IC.

To this end, the plurality of conductive lines CW may extend in thesecond direction y crossing a longitudinal direction (i.e., the firstdirection x) of the first and second electrodes C141 and C142 and may beconnected to each of the plurality of solar cells.

The plurality of conductive lines CW may include a plurality of firstconductive lines CW1 and a plurality of second conductive lines CW2.

The first conductive line CW1 may be connected to the first electrodeC141 included in each solar cell using a conductive adhesive CA and maybe insulated from the second electrode C142 of each solar cell throughan insulating layer IL formed of an insulating material.

Further, the second conductive line CW2 may be connected to the secondelectrode C142 included in each solar cell using a conductive adhesiveCA and may be insulated from the first electrode C141 of each solar cellthrough an insulating layer IL formed of an insulating material.

A linewidth WCW of each conductive line CW may be 0.5 mm to 2.5 mm inconsideration of a reduction in the manufacturing cost while maintaininga line resistance of the conductive line CW at a sufficiently low level.A distance WDCW between the first and second conductive lines CW1 andCW2 may be 4 mm to 6.5 mm in consideration of the total number ofconductive lines CW, so that a short circuit current of the solar cellmodule is not damaged.

A thickness of each conductive line CW may be 0.05 mm to 0.3 mm.

The interconnector IC may be positioned between the first and secondsolar cells C1 and C2 and may extend in the first direction x. The firstand second conductive lines CW1 and CW2 may be connected to theinterconnector IC, and thus the plurality of solar cells may beconnected in series in the second direction y.

The embodiment of the invention is illustrated and described using anexample where the solar cell module according to the embodiment of theinvention includes the interconnector IC. However, the interconnector ICmay be omitted. When the interconnector IC is omitted, the first andsecond conductive lines CW1 and CW2 may be directly connected to eachother or may be formed as one body, thereby connecting the pluralitysolar cells C1 and C2 in series.

An insulating adhesive portion AT may extend in the first direction x onat least a portion of a surface (for example, the back surface) of thesemiconductor substrate 110, on which the conductive lines CW aredisposed. The insulating adhesive portion AT may serve to fix (ortemporarily fix) the conductive lines CW to the semiconductor substrate110 and the first and second electrodes C141 and C142 during a processfor manufacturing the solar cell module.

More specifically, before a tabbing process for connecting theconductive lines CW to the first and second electrodes C141 and C142through another thermal process or the lamination process, theinsulating adhesive portion AT may serve to temporarily fix theconductive lines CW to a surface (for example, the back surface) of thesemiconductor substrate 110, so that the conductive lines CW disposed onthe surface (for example, the back surface) of the semiconductorsubstrate 110 do not move on the surface (for example, the back surface)of the semiconductor substrate 110.

As shown in FIG. 3, the insulating adhesive portion AT may be disposedaround a middle portion and both edges of the semiconductor substrate110 and may extend in the first direction x crossing a longitudinaldirection of the conductive lines CW.

The insulating adhesive portion AT can make it easier to perform themanufacturing process of the solar cell module by fixing the conductivelines CW disposed on the back surface of the semiconductor substrate 110so that the conductive lines CW do not move before the tabbing process.

As shown in FIG. 3, the insulating adhesive portion AT may be attachedto a back surface of a portion of each conductive line CW and the backsurface of the semiconductor substrate 110 and may temporarily fix aportion of each conductive line CW to the back surface of thesemiconductor substrate 110. The insulating adhesive portion AT may bemelted during the lamination process for modularizing the plurality ofsolar cells and may be adhered and attached up to a side as well as aback surface of a portion of each conductive line CW in the solar cellmodule, that has been finally completed.

When the insulating adhesive portion AT is adhered and attached up tothe side as well as the back surface of at least a portion of eachconductive line CW as described above, the conductive line CW, to whichthe insulating adhesive portion AT is attached, may minimize a formationspace of an air trap at a side of the conductive line CW. Hence, theconductive line CW can be prevented from being corroded by moisturecontained in the air trap.

After a structure of the solar cell module according to the embodimentof the invention is described, a structure of the insulating adhesiveportion AT, that is adhered and attached up to the side as well as theback surface of at least a portion of each conductive line CW, isdescribed in detail with reference to figures subsequent to FIG. 6.

Each component of the solar cell module according to the embodiment ofthe invention is described in detail below.

FIG. 4 is a partial perspective view illustrating an example of a solarcell applied to a solar cell module shown in FIG. 3. FIG. 5 is across-sectional view of a solar cell shown in FIG. 4 in a seconddirection.

As shown in FIGS. 4 and 5, an example of a solar cell according to theembodiment of the invention may include an anti-reflection layer 130, asemiconductor substrate 110, a tunnel layer 180, a plurality of emitterregions 121, a plurality of back surface field regions 172, a pluralityof intrinsic semiconductor layers 150, a passivation layer 190, aplurality of first electrodes C141, and a plurality of second electrodesC142.

In the embodiment disclosed herein, the anti-reflection layer 130, theintrinsic semiconductor layer 150, the tunnel layer 180, and thepassivation layer 190 may be omitted, if desired or necessary. However,when the solar cell includes them, efficiency of the solar cell may befurther improved. Thus, the embodiment of the invention is describedusing the solar cell including the anti-reflection layer 130, theintrinsic semiconductor layer 150, the tunnel layer 180, and thepassivation layer 190 by way of example.

The semiconductor substrate 110 may be formed of at least one of singlecrystal silicon and polycrystalline silicon containing impurities of afirst conductive type. For example, the semiconductor substrate 110 maybe formed of a single crystal silicon wafer.

In the embodiment disclosed herein, the first conductive type may be oneof an n-type and a p-type.

When the semiconductor substrate 110 is of the p-type, the semiconductorsubstrate 110 may be doped with impurities of a group III element, suchas boron (B), gallium (Ga), and indium (In). Alternatively, when thesemiconductor substrate 110 is of the n-type, the semiconductorsubstrate 110 may be doped with impurities of a group V element, such asphosphorus (P), arsenic (As), and antimony (Sb).

In the following description, the embodiment of the invention isdescribed using an example where the first conductive type is then-type.

A front surface of the semiconductor substrate 110 may be an unevensurface having a plurality of uneven portions or having unevencharacteristics. Thus, the emitter regions 121 positioned on the frontsurface of the semiconductor substrate 110 may have an uneven surface.

Hence, an amount of light reflected from the front surface of thesemiconductor substrate 110 may decrease, and an amount of lightincident on the inside of the semiconductor substrate 110 may increase.

The anti-reflection layer 130 may be positioned on the front surface ofthe semiconductor substrate 110, so as to minimize a reflection of lightincident on the front surface of the semiconductor substrate 110 fromthe outside. The anti-reflection layer 130 may be formed of at least oneof aluminum oxide (AlOx), silicon nitride (SiNx), silicon oxide (SiOx),and silicon oxynitride (SiOxNy).

The tunnel layer 180 is disposed on an entire back surface of thesemiconductor substrate 110 while directly contacting the entire backsurface of the semiconductor substrate 110 and may include a dielectricmaterial. Thus, as shown in FIGS. 4 and 5, the tunnel layer 180 may passthrough carriers produced in the semiconductor substrate 110.

In other words, the tunnel layer 180 may pass through carriers producedin the semiconductor substrate 110 and may perform a passivationfunction with respect to the back surface of the semiconductor substrate110.

The tunnel layer 180 may be formed of a dielectric material includingsilicon carbide (SiCx) or silicon oxide (SiOx) having strong durabilityat a high temperature equal to or higher than 600° C. Other materialsmay be used. For example, the tunnel layer 180 may be formed of siliconnitride (SiNx), hydrogenated SiNx, aluminum oxide (AlOx), siliconoxynitride (SiON), or hydrogenated SiON. A thickness of the tunnel layer180 may be 0.5 nm to 2.5 nm.

The plurality of emitter regions 121 may be disposed on the back surfaceof the semiconductor substrate 110, and more specifically may directlycontact a portion of a back surface of the tunnel layer 180. Theplurality of emitter regions 121 may extend in the first direction x.The emitter regions 121 may be formed of polycrystalline siliconmaterial of a second conductive type opposite the first conductive type.The emitter regions 121 may form a p-n junction together with thesemiconductor substrate 110 with the tunnel layer 180 interposedtherebetween.

Because each emitter region 121 forms the p-n junction together with thesemiconductor substrate 110, the emitter region 121 may be of thep-type. However, if the semiconductor substrate 110 is of the p-typeunlike the embodiment described above, the emitter region 121 may be ofthe n-type. In this instance, separated electrons may move to theplurality of emitter regions 121, and separated holes may move to theplurality of back surface field regions 172.

Returning to the embodiment of the invention, when the emitter region121 is of the p-type, the emitter region 121 may be doped withimpurities of a group III element such as B, Ga, and In. On thecontrary, if the emitter region 121 is of the n-type, the emitter region121 may be doped with impurities of a group V element such as P, As, andSb.

The plurality of back surface field regions 172 may be disposed on theback surface of the semiconductor substrate 110. More specifically, theplurality of back surface field regions 172 may directly contact aportion (spaced apart from each of the plurality of emitter regions 121)of the back surface of the tunnel layer 180. The plurality of backsurface field regions 172 may extend in the first direction x parallelto the plurality of emitter regions 121.

The back surface field regions 172 may be formed of polycrystallinesilicon material more heavily doped than the semiconductor substrate 110with impurities of the first conductive type. Thus, when thesemiconductor substrate 110 is doped with, for example, n-typeimpurities, each of the plurality of back surface field regions 172 maybe an n⁺-type region.

A potential barrier is formed by a difference between impurityconcentrations of the semiconductor substrate 110 and the back surfacefield regions 172. Hence, the back surface field regions 172 can preventor reduce holes from moving to the back surface field regions 172 usedas a moving path of electrons through the potential barrier and can makeit easier for carriers (for example, electrons) to move to the backsurface field regions 172.

Thus, the embodiment of the invention can reduce an amount of carrierslost by a recombination and/or a disappearance of electrons and holes atand around the back surface field regions 172 or at and around the firstand second electrodes C141 and C142 and can accelerate a movement ofelectrons, thereby increasing an amount of electrons moving to the backsurface field regions 172.

FIGS. 4 and 5 illustrate that the emitter regions 121 and the backsurface field regions 172 are formed on the back surface of the tunnellayer 180 using polycrystalline silicon material, by way of example.Unlike FIGS. 4 and 5, if the tunnel layer 180 is omitted, the emitterregions 121 and the back surface field regions 172 may be doped bydiffusing impurities into the back surface of the semiconductorsubstrate 110. In this instance, the emitter regions 121 and the backsurface field regions 172 may be formed of the same material (forexample, single crystal silicon) as the semiconductor substrate 110.

The intrinsic semiconductor layer 150 may be formed on the back surfaceof the tunnel layer 180 exposed between the emitter region 121 and theback surface field region 172. The intrinsic semiconductor layer 150 maybe formed as an intrinsic polycrystalline silicon layer, that is notdoped with impurities of the first conductive type or impurities of thesecond conductive type, unlike the emitter region 121 and the backsurface field region 172.

Further, as shown in FIGS. 4 and 5, the intrinsic semiconductor layer150 may be configured such that both sides directly contact the side ofthe emitter region 121 and the side of the back surface field region172, respectively.

The passivation layer 190 removes a defect resulting from a danglingbond formed in a back surface of a polycrystalline silicon layer formedat the back surface field regions 172, the intrinsic semiconductorlayers 150, and the emitter regions 121, and thus can prevent carriersproduced in the semiconductor substrate 110 from being recombined anddisappeared by the dangling bond.

To this end, the passivation layer 190 may cover a remaining portionexcept a portion, on which the first and second electrodes C141 and C142are formed, from the back surface of the semiconductor substrate 110.

The passivation layer 190 may be formed of a dielectric material. Forexample, the passivation layer 190 may be formed of at least one ofhydrogenated silicon nitride (SiNx:H), hydrogenated silicon oxide(SiOx:H), hydrogenated silicon nitride oxide (SiNxOy:H), hydrogenatedsilicon oxynitride (SiOxNy:H), and hydrogenated amorphous silicon(a-Si:H).

The first electrode C141 may be connected to the emitter region 121 andmay extend in the first direction x. The first electrode C141 maycollect carriers (for example, holes) moving to the emitter region 121.

The second electrode C142 may be connected to the back surface fieldregion 172 and may extend in the first direction x in parallel with thefirst electrode C141. The second electrode C142 may collect carriers(for example, electrons) moving to the back surface field region 172.

As shown in FIG. 3, the first and second electrodes C141 and C142 mayextend in the first direction x and may be alternately disposed in thesecond direction y.

The first and second electrodes C141 and C142 may include a metalmaterial different from conductive lines CW and a conductive adhesiveCA. For example, each of the first and second electrodes C141 and C142may be formed as at least one layer including at least one of titanium(Ti), silver (Ag), aluminum (Al), nickel-vanadium (NiV) alloy, nickel(Ni), nickel-aluminum (NixAly) alloy, molybdenum (Mo), or tin (Sn).

The first and second electrodes C141 and C142 may be formed using one ofa sputtering method, an electron beam evaporator, an electroless platingmethod, and an electroplating method.

In the solar cell having the above-described structure according to theembodiment of the invention, holes collected by the first electrodesC141 and electrons collected by the second electrodes C142 may be usedas electric power of an external device through an external circuitdevice.

The solar cell applied to the solar cell module according to theembodiment of the invention is not limited to FIGS. 4 and 5. Thecomponents of the solar cell may be variously changed, except that thefirst and second electrodes C141 and C142 included in the solar cell areformed on the back surface of the semiconductor substrate 110.

For example, the solar cell module according to the embodiment of theinvention may use a metal wrap through (MWT) solar cell, that isconfigured such that a portion of the first electrode C141 and theemitter region 121 are positioned on the front surface of thesemiconductor substrate 110, and the portion of the first electrode C141is connected to a remaining portion of the first electrode C141 formedon the back surface of the semiconductor substrate 110 through a hole ofthe semiconductor substrate 110.

FIG. 6 illustrates a cross-sectional structure, in which the pluralityof solar cells each having above-described configuration are connectedin series using the conductive lines CW and the interconnector IC asshown in FIG. 3.

More specifically, FIG. 6 is a cross-sectional view taken along linecsx1-csx1 of FIG. 3.

As shown in FIG. 6, a plurality of solar cells including a first solarcell C1 and a second solar cell C2 may be arranged in the seconddirection y.

A longitudinal direction of a plurality of first and second electrodesC141 and C142 included in the first and second solar cells C1 and C2 maycorrespond to the first direction x.

The first and second solar cells C1 and C2, that are arranged in thesecond direction y as described above, may be connected in series toeach other in the second direction y using first and second conductivelines CW1 and CW2 and an interconnector IC to form a string.

The first and second conductive lines CW1 and CW2 and the interconnectorIC may be formed of a conductive metal material. The first and secondconductive lines CW1 and CW2 may be connected to the back surface of thesemiconductor substrate 110 of each solar cell and then may be connectedto the interconnector IC for a serial connection of the solar cells.

Each of the first and second conductive lines CW1 and CW2 may have aconductive wire shape having a circular cross section or a ribbon shape,in which a width is greater than a thickness.

More specifically, the plurality of first conductive lines CW1 mayoverlap the plurality of first electrodes C141 included in each of thefirst and second solar cells C1 and C2 and may be connected to theplurality of first electrodes C141 through a conductive adhesive CA.Further, the plurality of first conductive lines CW1 may be insulatedfrom the plurality of second electrodes C142 included in each of thefirst and second solar cells C1 and C2 through an insulating layer ILformed of an insulating material.

In this instance, as shown in FIGS. 3 and 6, each of the plurality offirst conductive lines CW1 may protrude to the outside of thesemiconductor substrate 110 toward the interconnector IC disposedbetween the first and second solar cells C1 and C2.

The plurality of second conductive lines CW2 may overlap the pluralityof second electrodes C142 included in each of the first and second solarcells C1 and C2 and may be connected to the plurality of secondelectrodes C142 through a conductive adhesive CA. Further, the pluralityof second conductive lines CW2 may be insulated from the plurality offirst electrodes C141 included in each of the first and second solarcells C1 and C2 through an insulating layer IL formed of an insulatingmaterial.

In this instance, as shown in FIGS. 3 and 6, each of the plurality ofsecond conductive lines CW2 may protrude to the outside of thesemiconductor substrate 110 toward the interconnector IC disposedbetween the first and second solar cells C1 and C2.

The conductive adhesive CA may be formed of a metal material includingtin (Sn) or Sn-containing alloy. The conductive adhesive CA may beformed as one of a solder paste including Sn or Sn-containing alloy, anepoxy solder paste, in which Sn or Sn-containing alloy is included in anepoxy, and a conductive paste.

For example, when the conductive adhesive CA is formed as the solderpaste, the solder paste may include at least one metal material of Sn,SnBi, SnIn, SnAgCu, SnPb, SnBiCuCo, SnBiAg, SnPbAg, or SnAg. When theconductive adhesive CA is formed as the epoxy solder paste, the epoxysolder paste may be formed by including at least one metal material ofSn, SnBi, SnIn, SnAgCu, SnPb, SnBiCuCo, SnBiAg, SnPbAg, or SnAg in anepoxy resin.

Further, when the conductive adhesive CA is formed as the conductivepaste, the conductive paste may be formed by including at least onemetal material of Sn, SnBi, Ag, AgIn, or AgCu in a resin, for example,an epoxy.

The insulating layer IL may be made of any material as long as aninsulating material is used. For example, the insulating layer IL mayuse one insulating material of an epoxy-based resin, polyimide,polyethylene, an acrylic-based resin, and a silicon-based resin.

As shown in an enlarged view of FIG. 3, the conductive adhesive CA maybe positioned only on the back surface of the first electrode or thesecond electrode positioned in a portion crossing the conductive lineCW. The insulating layer IL may be positioned not only on the backsurface of the first electrode or the second electrode positioned in aportion crossing the conductive line CW but also on the back surface ofthe semiconductor substrate 110 around the back surface of the firstelectrode or the second electrode.

When the conductive adhesive CA and the insulating layer IL arepositioned at the above-described position, a short circuit between theunintended electrode and the conductive line CW can be more efficientlyprevented.

As shown in FIGS. 3 and 6, a portion protruding to the outside of thesemiconductor substrate 110 in each of the first and second conductivelines CW1 and CW2 connected to the back surface of each solar cell maybe commonly connected to the back surface of the interconnector ICbetween the first and second solar cells C1 and C2. Hence, the pluralityof solar cells C1 and C2 may be connected in series to each other in thesecond direction y to form a string.

In the solar cell module having the above-described structure, when abad connection between the first and second conductive lines CW1 and CW2and the first and second electrodes C141 and C142 is generated in theplurality of solar cells, the first and second conductive lines CW1 andCW2 of a solar cell having the bad connection may be disconnected fromthe interconnector IC. Hence, only the bad solar cell can be easilyreplaced.

A structure of the insulating adhesive portion AT attached to the backsurface of the semiconductor substrate 110 is described in detail below.

FIGS. 7 to 9 illustrate in detail a structure of an insulating adhesiveportion AT illustrated in FIGS. 3 and 6.

More specifically, FIG. 7 is an enlarged view of a back surface of asolar cell module, to which an insulating adhesive portion AT isattached as shown in FIG. 3. In FIG. 8, (a) is an enlarged view of across section of the second direction along line A-A of FIG. 7 before alamination step, and in FIG. 8, (b) is an enlarged view of a crosssection of the second direction along line A-A of FIG. 7 in a finallycompleted solar cell module after the lamination step.

Further, in FIG. 9, (a) is an enlarged view of a cross section of thefirst direction along line B-B of FIG. 7 before a lamination step, andin FIG. 9, (b) is an enlarged view of a cross section of the firstdirection along line B-B of FIG. 7 in a finally completed solar cellmodule after the lamination step.

The description duplicative with that illustrated in FIGS. 3 to 6 isomitted in FIGS. 7 to 9, and only a difference between FIGS. 3 to 6 andFIGS. 7 to 9 is mainly described.

As shown in FIG. 7, the insulating adhesive portion AT may extend in thefirst direction x on at least a portion of the back surface of thesemiconductor substrate 110, on which the conductive lines CW1 and CW2are disposed, and may fix the conductive lines CW1 and CW2 to thesemiconductor substrate 110 and the first and second electrodes C141 andC142.

As shown in FIG. 7, a width WYAT of the insulating adhesive portion ATin the second direction y may be greater than a distance WDCW betweenthe two adjacent conductive lines CW and may be less than five times thedistance WDCW, in order to further increase an adhesive strength of theinsulating adhesive portion AT.

More specifically, the width WYAT of the insulating adhesive portion ATin the second direction y may be, for example, 2.5 mm to 30 mm inconsideration of a physical adhesive strength of the insulating adhesiveportion AT for fixing the conductive line CW. Preferably, the width WYATmay be 5 mm to 15 mm.

Further, FIG. 3 illustrates that a length of the insulating adhesiveportion AT in the first direction x is slightly shorter than a length ofthe semiconductor substrate 110 in the first direction x. However, theymay be substantially the same as each other.

Thus, the length of the insulating adhesive portion AT in the firstdirection x may be changed depending on a size of the semiconductorsubstrate 110. For example, when the size of the semiconductor substrate110 is 6 inches, the length of the insulating adhesive portion AT in thefirst direction x may be 156 mm to 162 mm.

The plurality of first and second electrodes C141 and C142 extending inthe first direction x may overlap one insulating adhesive portion AT.

The insulating adhesive portion AT may be a type of an insulating tapeobtained by forming an adhesive IA on a surface of a base film BF.

The base film BF may melt during the lamination process because amelting point of the base film BF is lower than a temperature of thelamination process for modularizing the plurality of solar cells. Tothis end, the base film BF may include polyolefin capable of meltingduring the lamination process.

The fact that the base film BF melts during the lamination process meansthat the base film BF is not fully burned but softened in a paste statehaving a viscosity.

The melting point of the base film BF may be lower than one temperaturebetween 160° C. and 170° C., for example.

Further, the adhesive IA of the insulating adhesive portion AT mayinclude at least one of acrylic, silicon, or an epoxy. The adhesive IAmay melt during the lamination process.

As shown in (a) of FIG. 8 and (a) of FIG. 9, when the insulatingadhesive portion AT attaches the conductive lines CW1 and CW2 to theback surface of the semiconductor substrate 110 before the laminationprocess for modularizing the plurality of solar cells, the insulatingadhesive portion AT may be attached to the back surfaces of theconductive lines CW1 and CW2 disposed on the back surface of thesemiconductor substrate 110, to the back surface of the semiconductorsubstrate 110 exposed between the conductive lines CW1 and CW2, and tothe back surfaces of the first and second electrodes C141 and C142.

As shown in (b) of FIG. 8 and (b) of FIG. 9, when the lamination processinvolving heat of 160° C. to 170° C. and pressure is performed in astate where the conductive lines CW1 and CW2 is attached to the backsurface of the semiconductor substrate 110 using the insulating adhesiveportion AT, the base film BF and the adhesive IA of the insulatingadhesive portion AT may melt and may be filled in the sides of theconductive lines CW1 and CW2, in a space between the conductive linesCW1 and CW2 and the insulating layer IL, and in a space between theconductive lines CW1 and CW2 and the back surface of the semiconductorsubstrate 110. Then, the insulating adhesive portion AT in a statefilled in the above-described locations may be dried and cured.

Hence, as shown in (b) of FIG. 8 and (b) of FIG. 9, after the laminationprocess is performed, the insulating adhesive portion AT may be adheredand attached up to the sides of the conductive lines CW1 and CW2 and aspace between the conductive lines CW1 and CW2 and the insulating layerIL in the finally completed solar cell module.

As a result, the solar cell module according to the embodiment of theinvention can minimize the generation of the air trap at the sides andthe periphery of the conductive lines CW1 and CW2 and prevent theconductive lines CW1 and CW2 from being corroded by moisture.

More specifically, as shown in (a) of FIG. 9, when the insulatingadhesive portion AT is attached to the back surface of the semiconductorsubstrate 110 and the back surfaces of the conductive lines CW1 and CW2,an empty space ES may be formed by a height difference between the backsurface of the conductive line CW and the back surface of thesemiconductor substrate 110. The empty space ES may be surrounded by thesides of the conductive lines CW1 and CW2, the insulating adhesiveportion AT, and the back surface of the semiconductor substrate 110.

Air may be naturally filled in the empty space ES during a manufacturingprocess of the solar cell module. If the empty space ES is not removedand remains in the finally completed solar cell module, the air may beconfined in the empty space ES and the empty space may be sealed. Hence,the air trap may be formed.

Thus, when the solar cell module is used in an outdoor space afterward,moisture may be contained in the air trap due to an outdoor weatherenvironment. Hence, the conductive lines CW1 and CW2 may be corroded,and a resistance of the conductive lines CW1 and CW2 may increase.

However, in the embodiment of the invention, because the insulatingadhesive portion AT includes a material capable of melting during thelamination process as described above, the insulating adhesive portionAT may melt and may be filled in the empty space ES surrounded by thesides of the conductive lines CW1 and CW2, the insulating adhesiveportion AT, and the back surface of the semiconductor substrate 110.Hence, the insulating adhesive portion AT can prevent the formation ofthe air trap and prevent a reduction in the efficiency of the solar cellmodule.

The embodiment of the invention described the use of polyolefin as anexample of the material of the insulating adhesive portion AT capable ofmelting during the lamination process, but is not limited thereto. Anymaterial may be used for the insulating adhesive portion AT as long asthe material melts in the lamination process performed at onetemperature between 160° C. and 170° C.

The insulating adhesive portion AT may be transparent, but may be whiteor black.

An example of a method for manufacturing the solar cell module accordingto the embodiment of the invention is described below.

FIGS. 10 to 13 illustrate a method for manufacturing a solar cell moduleaccording to the embodiment of the invention. A method for manufacturinga solar cell module according to the embodiment of the invention isdescribed in detail below with reference to FIGS. 7 to 9 together withFIG. 10.

As shown in FIG. 10, a method for manufacturing a solar cell moduleaccording to the embodiment of the invention includes a conductiveadhesive application operation 51, a conductive line dispositionoperation S2, an insulating adhesive portion attaching operation S3, anda lamination operation S4.

Before the conductive adhesive application operation 51 is performed, asolar cell including first and second electrodes C141 and C142, thatextend in a first direction x on a surface of a semiconductor substrate110 and have different polarities as shown in FIGS. 4 and 5, isprepared.

In the embodiment disclosed herein, the solar cell may be a back contactsolar cell, in which all of the first and second electrodes C141 andC142 are disposed on a back surface of the semiconductor substrate 110.However, the embodiment of the invention is not limited to the backcontact solar cell. The embodiment of the invention may use aconventional solar cell, in which the first electrodes C141 are disposedon a front surface of the semiconductor substrate 110 and the secondelectrodes C142 are disposed on the back surface of the semiconductorsubstrate 110.

Hereinafter, the embodiment of the invention is described using the backcontact solar cell by way of example.

After the back contact solar cell is prepared as described above, aconductive adhesive CA may be applied to a portion of each of the firstand second electrodes C141 and C142 in the conductive adhesiveapplication operation Si.

A portion of each of the first and second electrodes C141 and C142, towhich the conductive adhesive CA is applied, may be a crossing portionof conductive lines CW and the first and second electrodes C141 andC142.

An insulating layer IL may be additionally formed in a portion of theconductive line CW that has to be insulated from the first electrodeC141 or the second electrode C142.

Thus, as shown in FIGS. 7 to 9, the conductive adhesive CA may beapplied to a crossing portion of the first electrode C141 and the firstconductive line CW1 and a crossing portion of the second electrode C142and the second conductive line CW2 in the back surface of thesemiconductor substrate 110 and may be dried.

Further, as shown in FIGS. 7 to 9, the insulating layer IL may be formedin a crossing portion of the first electrode C141 and the secondconductive line CW2 and a crossing portion of the second electrode C142and the first conductive line CW1 and may be cured.

As shown in FIGS. 8 and 9, a thickness of the insulating layer IL may beless than a thickness of the conductive adhesive CA, in order to morecertainly secure a connection strength between the conductive adhesiveCA and the conductive line CW.

Next, in the conductive line disposition operation S2, as shown in FIGS.7 to 9, the conductive lines CW may be disposed to extend in a seconddirection y crossing the first direction x, so that the conductive linesCW overlap a portion of each of the first and second electrodes C141 andC142, to which the conductive adhesive CA is applied.

For example, all of the conductive lines CW may be disposed on the backsurface of the semiconductor substrate 110.

Hence, a disposition structure of the conductive adhesive CA, theinsulating layer IL, and the conductive lines CW formed on the first andsecond electrodes C141 and C142 may be the same as FIG. 3.

In this instance, because the conductive adhesive CA and the insulatinglayer IL have been already dried or cured, the conductive line CW maynot be attached to the back surface of the semiconductor substrate 110.

Thus, as shown in FIG. 7, (a) of FIG. 8, and (a) of FIG. 9, in theinsulating adhesive portion attaching operation S3, an insulatingadhesive portion AT extending in the first direction x may be attachedto a portion of the back surface of the semiconductor substrate 110 anda portion of the conductive lines CW disposed on the portion of the backsurface of the semiconductor substrate 110, in order to easily performthe manufacturing process.

Hence, the insulating adhesive portion AT may fix the conductive linesCW disposed on the back surface of the semiconductor substrate 110 tothe back surface of the semiconductor substrate 110.

A melting point of the insulating adhesive portion AT may be lower thana temperature of the lamination operation S4. More specifically, asshown in (a) of FIG. 8 and (a) of FIG. 9, the insulating adhesiveportion AT may be a type of an insulating tape obtained by forming anadhesive IA on a surface of a base film BF. Melting points of the basefilm BF and the adhesive IA may be lower than the temperature of thelamination operation S4.

For example, when the lamination operation S4 is performed at onetemperature between 160° C. and 170° C., the melting points of the basefilm BF and the adhesive IA may be lower than the one temperaturebetween 160° C. and 170° C.

The base film BF may include a polyolefin material, of which a meltingpoint is lower than the temperature of the lamination operation S4. Theadhesive IA may include at least one of acrylic, silicon, or an epoxy,of which a melting point is lower than the temperature of the laminationoperation S4.

After the conductive lines CW are fixed to the back surface of thesemiconductor substrate 110 of each solar cell by the insulatingadhesive portion AT, each solar cell may be disposed on a fronttransparent substrate 10.

More specifically, a front encapsulant 20 may be disposed on the fronttransparent substrate 10, and an interconnector IC may be disposed onthe front encapsulant 20.

Afterwards, the solar cell, to which the insulating adhesive portion ATis attached, may be disposed on the front encapsulant 20.

In this instance, the back surface of the semiconductor substrate 110,to which the insulating adhesive portion AT is attached, may upwardlyface, and the front surface of the semiconductor substrate 110 maycontact the front encapsulant 20.

Ends of the conductive lines CW fixed to each solar cell may overlap theinterconnector IC.

Afterwards, as shown in FIG. 12, a back encapsulant 30 and a backsubstrate 40 may be sequentially disposed on the back surface of thesemiconductor substrate 110, to which the insulating adhesive portion ATis attached.

The lamination operation S4 involving heat and pressure may be performedin a state where the plurality of solar cells are disposed between thefront transparent substrate 10 and the back substrate 40.

The lamination operation S4 may be performed at one temperature between160° C. and 170° C. For example, the lamination operation S4 may beperformed at 165° C.

Thus, as shown in FIG. 13, in the lamination operation S4, theinsulating adhesive portion AT may extend from a portion of theconductive line CW to a side of the conductive line CW in a state wherethe insulating adhesive portion AT is softened in a paste form having aviscosity through a thermal process of the lamination operation S4.

In addition, as shown in (b) of FIG. 8 and (b) of FIG. 9, in thelamination operation S4, the insulating adhesive portion AT may extendto an empty space ES between the conductive lines CW and the first andsecond electrodes C141 and C142 (or an empty space ES between theconductive lines CW and the insulating layer IL) in a softened state ofthe insulating adhesive portion AT. The insulating adhesive portion ATextended to the empty space ES may be cured.

Further, in the lamination operation S4, the back encapsulant 30 of asheet shape may be softened together with the insulating adhesiveportion AT and may be filled in an empty space between the insulatingadhesive portion AT and the back encapsulant 30.

Hence, in the lamination operation S4, the insulating adhesive portionAT and the back encapsulant 30 may completely adhere to each other andmay physically contact each other.

Further, in the lamination operation S4, the conductive adhesive CA maybe softened and may be connected to the conductive line CW in thesoftened state. However, this is not necessarily performed. For example,after the conductive line disposition operation S2 and before theinsulating adhesive portion attaching operation S3, the thermal processmay be performed on the conductive adhesive CA, and the conductiveadhesive CA may be connected to the conductive line CW.

As described above, because the method for manufacturing the solar cellmodule according to the embodiment of the invention fixes the conductivelines CW to the back surface of the semiconductor substrate 110 throughthe insulating adhesive portion AT in a state where the conductive linesCW are disposed on the back surface of the semiconductor substrate 110,the lamination operation S4 can be more easily performed.

Further, the embodiment of the invention cures the insulating adhesiveportion AT in a state where the insulating adhesive portion AT issoftened and filled in an empty space ES between the conductive lines CWand the first and second electrodes C141 and C142 or an empty space ESbetween the conductive lines CW and the semiconductor substrate 110 inthe lamination operation S4, thereby minimizing the generation of theair trap in the completed solar cell module. Hence, the conductive linesCW can be prevented from being corroded by moisture.

In the lamination operation S4, the conductive lines CW fixed to eachsolar cell may be electrically connected to the interconnector IC.However, this is not necessarily performed. For example, after theinsulating adhesive portion AT fixes the conductive lines CW to the backsurface of the semiconductor substrate 110, the conductive lines CWfixed to each solar cell may be electrically connected to theinterconnector IC through a separate thermal process before thelamination operation S4.

The method for manufacturing the solar cell module according to theembodiment of the invention was described using the back contact solarcell by way of example. However, the conventional solar cell may beused.

When the conventional solar cell is used, a process for forming theinsulating layer IL may be omitted in the conductive adhesiveapplication operation 51. Further, in the conductive line dispositionoperation S2, a portion of the conductive line CW may be disposed on thefront surface of the semiconductor substrate 110, and a remainingportion of the conductive line CW may be disposed on the back surface ofthe semiconductor substrate 110.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the scope of the principles of thisdisclosure. More particularly, various variations and modifications arepossible in the component parts and/or arrangements of the subjectcombination arrangement within the scope of the disclosure, the drawingsand the appended claims. In addition to variations and modifications inthe component parts and/or arrangements, alternative uses will also beapparent to those skilled in the art.

What is claimed is:
 1. A solar cell module comprising: solar cells eachincluding a semiconductor substrate, and first electrodes and secondelectrodes that extend in a first direction on a surface of thesemiconductor substrate, the first electrodes and the second electrodeshaving different polarities; conductive lines extended in a seconddirection crossing the first direction on the surface of thesemiconductor substrate, the conductive lines being connected to thefirst electrodes or the second electrodes through a conductive adhesive;and an insulating adhesive portion extending in the first direction onat least a portion of the surface of the semiconductor substrate, onwhich the conductive lines are disposed, and fixing the conductive linesto the semiconductor substrate and the first and second electrodes, theinsulating adhesive portion being attached on a back surface of least aportion of each conductive line and a side surface of at least a portionof each conductive line.
 2. The solar cell module of claim 1, whereinthe insulating adhesive portion is further attached up to thesemiconductor substrate exposed between the conductive lines andsurfaces of the first and second electrodes.
 3. The solar cell module ofclaim 1, wherein the insulating adhesive portion is an insulating tapecomprising an adhesive on a surface of a base film.
 4. The solar cellmodule of claim 3, wherein the base film includes a polyolefin material.5. The solar cell module of claim 3, wherein a melting point of the basefilm is lower than one temperature between 160° C. and 170° C.
 6. Thesolar cell module of claim 3, wherein the adhesive of the insulatingadhesive portion includes at least one of acrylic, silicon, and anepoxy.
 7. The solar cell module of claim 1, wherein a width of theinsulating adhesive portion in the second direction is greater than adistance between two adjacent conductive lines.
 8. The solar cell moduleof claim 1, wherein the first electrodes and the second electrodes arepositioned on a back surface of the semiconductor substrate, wherein theconductive lines are positioned on the back surface of the semiconductorsubstrate, on which the first electrodes and the second electrodes arepositioned, and wherein the insulating adhesive portion is positioned onthe back surface of the semiconductor substrate, on which the firstelectrodes, the second electrodes, and the conductive lines arepositioned.
 9. The solar cell module of claim 8, wherein thesemiconductor substrate of each solar cell is doped with impurities of afirst conductive type, wherein each solar cell further includes anemitter region doped with impurities of a second conductive typeopposite the first conductive type at the back surface of thesemiconductor substrate and a back surface field region more heavilydoped than the semiconductor substrate with impurities of the firstconductive type, and wherein each first electrode is connected to theemitter region, and each second electrode is connected to the backsurface field region.
 10. The solar cell module of claim 1, wherein theconductive lines include: first conductive lines connected to the firstelectrodes through the conductive adhesive and insulated from the secondelectrodes through an insulating layer; and second conductive linesconnected to the second electrodes through the conductive adhesive andinsulated from the first electrodes through the insulating layer. 11.The solar cell module of claim 10, wherein the solar cells include afirst solar cell and a second solar cell that are arranged adjacent toeach other in the second direction and are connected in series to eachother, and wherein the solar cell module further comprises aninterconnector that is positioned between the first solar cell and thesecond solar cell and connects the first solar cell and the second solarcell in series.
 12. The solar cell module of claim 11, wherein theinterconnector between the first solar cell and the second solar cellextends in the first direction.
 13. The solar cell module of claim 11,wherein the first conductive lines connected to the first solar cell andthe second conductive lines connected to the second solar cell arecommonly connected to the interconnector.
 14. A method for manufacturinga solar cell module, the method comprising: applying a conductiveadhesive to a portion of each of first electrodes and second electrodes,the first electrodes and the second electrodes extending in a firstdirection on a surface of a semiconductor substrate and having differentpolarities; disposing conductive lines to extend in a second directioncrossing the first direction and to overlap the portion of the each ofthe first electrodes and the second electrodes, to which the conductiveadhesive is applied; attaching an insulating adhesive portion extendingin the first direction to the semiconductor substrate and a portion ofeach conductive line; and performing a lamination process on thesemiconductor substrate, to which the insulating adhesive portion isattached, wherein the performing of the lamination process includessoftening and curing the insulating adhesive portion, the insulatingadhesive portion is attached on a back surface of at least the portionof each conductive line in the attaching of the insulating adhesiveportion, and the insulating adhesive portion is further attached on aside surface of the at least the portion of the each conductive linewhile the insulating adhesive portion is softened and cured.
 15. Themethod of claim 14, wherein the lamination process is performed at onetemperature between 160° C. and 170° C.
 16. The method of claim 14,wherein a melting point of the insulating adhesive portion is lower thana temperature of the lamination process.
 17. The method of claim 14,wherein the insulating adhesive portion is an insulating tape comprisingan adhesive on a surface of a base film.
 18. The method of claim 17,wherein the base film includes a polyolefin material.
 19. The method ofclaim 17, wherein melting points of the base film and the adhesive arelower than a temperature of the lamination process.
 20. The method ofclaim 14, wherein the performing of the lamination process includesfilling the insulating adhesive portion, that is in a softened state, inat least a portion of an empty space between the conductive lines andthe first electrodes and the second electrodes and then curing theinsulating adhesive portion.